JIIT

Academic Experts

Dr. Ajay Kumar

ASSOCIATE PROFESSOR

ajay.kumar@jiit.ac.in

Biography

Dr. Ajay Kumar is currently serving as an Associate Professor in the Department of Electronics and Communication Engineering at Jaypee Institute of Information Technology (JIIT), Noida. He holds a Ph.D. in Electrical Engineering from Delhi Technological University, Delhi (2019). He also earned an M.Tech in Nanoscience & Technology from DTU and a B.Tech in Electronics & Communication from UPTU, Lucknow. Dr. Kumar has more than 11 years of academic and research experience, including his tenure as a Junior Research Fellow on a DST-SERB Fast Track Project. He has guided multiple Ph.D. and M.Tech students and has been actively involved in Semiconductor device modeling, RF applications, and biosensor design.

His scholarly contributions include over 175 research articles in SCI-indexed journals, multiple patents, and conference proceedings. He has served as a reviewer for prestigious journals such as IEEE Transactions on Electron Devices, Nature Scientific Reports, Elsevier, IOP, and MDPI journals.

Dr. Kumar is a Senior Member of IEEE, member of IEEE Electron Devices Society, and a Life Member of the Solar Energy Society of India. He is passionate about bridging theoretical semiconductor research with real-world applications in electronics and biosensing

Educational Qualifications

Ph.D. from Delhi Technological University (DTU), Delhi, INDIA, 2019., M. Tech. from Delhi Technological University (DTU), Delhi, INDIA, 2014., B. Tech. in Electronics & Communication Engineering, UPTU, 2009.

Research Highlights

Dr. Ajay Kumar’s research is focused on advanced modeling, simulation, and performance analysis of nanoscale semiconductor devices, with a particular emphasis on FinFETs, TFETs, SOI-MOSFETs, and biosensors. His work includes device engineering using materials like GaN, InGaAs, SiGe, and perovskites for analog/RF, low-power, and sensing applications.

He has contributed to the development of high-performance sub-10nm devices with innovative dielectric engineering and gate stack designs, leading to improved frequency response, power gain, and reduced distortion in RF circuits. His TCAD-based simulation expertise has led to several publications in high-impact journals like IEEE Transactions on Nanotechnology, Applied Physics A, and Scientific Reports.

Dr. Kumar has made significant strides in label-free biosensing technologies through the design of dielectric-modulated MOSFETs, paving the way for early detection of biomolecules. His collaborative patents include novel JLTFET architectures for enhanced analog/RF performance and energy-efficient computation.

Areas Of Interest

Nanoscale Semiconductor Device Simulation
FinFETs and TFETs for Analog/RF and Sensing
High-k Dielectrics and Gate Stack Engineering
Biosensors using DM-MOSFETs and Photonic Structures
Perovskite and Hybrid Solar Cell Design

Publications

K. Sagar and A. Kumar, "Various Applications-Based Optimized DBR Structure With Effect of Different Material Systems," in IEEE Transactions on Nanotechnology, vol. 22, pp. 763-768, 2023, doi: 10.1109/TNANO.2023.3329161.
A. Jain, A. Kumar and N. Gupta, "Significant Improvement in Magnetic and Magnetoelectric Characteristics of (0.95 − x)Ba0.9Ca0.1TiO3-0.05Na0.5Bi0.5TiO3-xCoFe2O4 Ceramics," in IEEE Transactions on Magnetics, vol. 58, no. 2, pp. 1-14, Feb. 2022, Art no. 2501114, doi: 10.1109/TMAG.2021.3131511.).
A. Kumar, MM Tripathi, and R. Chaujar “Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature” IEEE Transactions on Electron Devices, Vol.65, Issue 3, pp 860-866. DOI: 10.1109/TED.2018.2793853.
A. Kumar, B. Tiwari, S. Singh, MM Tripathi, and R. Chaujar “Radiation Analysis of N-Channel TGRC-MOSFET: An X-Ray Dosimeter” IEEE Transactions on Electron Devices. Vol.65, pp 5014-5020, 2018. DOI: 10.1109/TED.2018.2869536.
A. Kumar. “Palladium-based Trench Gate MOSFET for Highly Sensitive Hydrogen Gas Sensor”, in Materials Science in Semiconductor Processing, Elsevier. Volume 120, December 2020, Pages 105274. DOI: https://doi.org/10.1016/j.mssp.2020.105274..